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ISO 7816-3 Analog Front End

The ISO 7816-3 Analog Front End (AFE) is a mixed-signal IP including five fully integrated I/O pads intended for both interface device (reader) and Integrated Circuit Card (ICC).

Key Features

ISO 7816-3 compliant
Fully integrated
Silicon proven
Class A, B & C
Internal pull-up

Features

  • five fully-integrated I/O pads: CLK, RST, I/O, VCC and GND
  • fully compliant with the ISO/IEC 7816-3 standard (class A, B and C)
  • silicon proven in 130 nm, 65 nm and 55 nm CMOS processes
  • square pad with 80 µm x 80 µm opening
  • operating junction temperature range: -40°C to 125°C
  • CLK digital input pad:
    • up to 50 MHz clock signal for high-speed test
    • internal pull-up with activation signal
    • input noise rejection through optional filter and Schmitt trigger buffer
    • standby mode canceling the current consumption
    • embedded level-shifters (Vcc level pad signal; Vdd level core control signals)
    • power-up protection
    • silicon area smaller than 0.016 mm² in a 130 nm CMOS process (156 µm x 101 µm)
  • RST digital input pad:
    • internal pull-up with activation signal
    • input noise rejection through Schmitt trigger buffer
    • standby mode canceling the current consumption
    • embedded level-shifters (Vcc level pad signal; Vdd level core control signals)
    • power-up protection
    • silicon area smaller than 0.016 mm² in a 130 nm CMOS process (156 µm x 101 µm)
  • I/O bidirectional digital pad:
    • three output modes with optional slew-rate control: Slow ISO, Fast ISO and CMOS
    • internal pull-up with activation signal
    • input noise rejection through Schmitt trigger buffer
    • standby mode canceling the current consumption
    • embedded level-shifters (Vcc level pad signal; Vdd level core control signals)
    • power-up protection
    • independent control of the reception and transmission paths
    • silicon area smaller than 0.024 mm² in a 130 nm CMOS process (231 µm x 101 µm)
  • VCC power supply pad:
    • silicon area smaller than 0.010 mm² in a 130 nm CMOS process (97 µm x 101 µm)
  • GND power supply pad:
    • silicon area smaller than 0.010 mm² in a 130 nm CMOS process (97 µm x 101 µm)
  • ESD protection and digital controller available separately

Deliverables

  • GDSII stream and layer map file
  • Library Exchange Format (LEF) file
  • Circuit Description Language (CDL) netlist
  • Liberty Timing File (.lib)
  • VHDL behavioral model
  • design specification

Please contact sales@invia.fr for any further information.

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